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M58PR256LE 数据表(PDF) 95 Page - STMicroelectronics |
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M58PR256LE 数据表(HTML) 95 Page - STMicroelectronics |
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95 / 119 page  M58PR256LE, M58PR512LE, M58PR001LE Common Flash interface 95/119 Table 45. Device geometry definition Offset Data Description Value 027h 0019h M58PR256LE device size = 2n in number of bytes 32 Mbytes 001Ah M58PR512LE device size = 2n in number of bytes 64 Mbytes 001Bh M58PR001LE device size = 2n in number of bytes 128 Mbytes 028h 029h 0001h 0000h Flash device interface code description x16 Async. 02Ah 02Bh 000Ah 0000h Maximum number of bytes in multi-byte program or page = 2n 1024 bytes 02Ch 0001h Number of identical sized erase block regions within the device bit 7 to 0 = x = number of Erase block regions 1 02Dh 02Eh 007Fh 0000h M58PR256LE erase block region 1 information Number of identical-size erase blocks = 007Fh+1 127 00FFh 0000h M58PR512LE erase block region 1 information Number of identical-size erase blocks = 00FFh+1 255 01FFh 0000h M58PR001LE erase block region 1 information Number of identical-size erase blocks = 01FFh+1 511 02Fh 030h 0000h 0004h Erase block region 1 information Block size in region 1 = 0400h * 256 byte 256 Kbyte 031h 038h Reserved Reserved for future erase block region information NA |
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