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M58PR256LE 数据表(PDF) 94 Page - STMicroelectronics |
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M58PR256LE 数据表(HTML) 94 Page - STMicroelectronics |
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94 / 119 page  Common Flash interface M58PR256LE, M58PR512LE, M58PR001LE 94/119 Table 44. CFI query system interface information Offset Data Description Value 01Bh 0017h VDD logic supply minimum program/erase or write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 1.7 V 01Ch 0020h VDD logic supply maximum program/erase or write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 2V 01Dh 0085h VPP [programming] supply minimum program/erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 8.5 V 01Eh 0095h VPP [programming] supply maximum program/erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 9.5 V 01Fh 0006h Typical timeout per single byte/word program = 2n µs 64 µs 020h 000Bh Typical timeout for buffer program = 2n µs 2048 µs 021h 000Ah Typical timeout per individual block erase = 2n ms 1 s 022h 0000h Typical timeout for full chip erase = 2n ms NA 023h 0002h Maximum timeout for word program = 2n times typical 256 µs 024h 0002h Maximum timeout for buffer program = 2n times typical 8192 µs 025h 0002h Maximum timeout per individual block erase = 2n times typical 4 s 026h 0000h Maximum timeout for chip erase = 2n times typical NA |
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