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M58PR256LE 数据表(PDF) 28 Page - STMicroelectronics

部件名 M58PR256LE
功能描述  256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
PDF  119 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58PR256LE 数据表(HTML) 28 Page - STMicroelectronics

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Command interface
M58PR256LE, M58PR512LE, M58PR001LE
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4.9.2
Program and verify phase
The program and verify phase requires 512 cycles to program the 512 words to the write
buffer. The data is stored sequentially, starting at the first address of the write buffer, until the
write buffer is full (512 words). To program less than 512 words, the remaining words should
be programmed with FFFFh.
Three successive steps are required to issue and execute the program and verify phase of
the command.
1.
Use one bus write operation to latch the start address and the first word to be
programmed. The Status Register Bank write status bit SR0 should be read to check
that the P/EC is ready for the next word.
2.
Each subsequent word to be programmed is latched with a new bus write operation.
The address must remain the start address as the P/EC increments the address
location. If any address is given that is not in the same block as the start address, the
program and verify phase terminates. Status Register bit SR0 should be read between
each bus write cycle to check the P/EC is ready for the next word.
3.
Once the write buffer is full, the data is programmed sequentially to the memory array.
After the program operation the device automatically verifies the data and reprograms if
necessary.
The program and verify phase can be repeated, without re-issuing the command, to
program additional 512 word locations as long as the address remains in the same block.
4.
Finally, after all words, or the entire block have been programmed, write FFFFh to any
address outside the block containing the start address to terminate the program and
verify phase.
Status Register bit SR0 must be checked to determine whether the program operation is
finished. The Status Register may be checked for errors at any time but it must be checked
after the entire block has been programmed.
4.9.3
Exit phase
When Status Register P/EC bit SR7 is set to ‘1’ this indicates that the device has exited the
buffer enhanced factory program operation.
Upon exiting the buffered enhanced factory program algorithm by writing FFFFh to an
address outside the block containing the start address, the Read mode of the programmed
and addressed banks remains unchanged.
A full Status Register check should be done to ensure that the block has been successfully
programmed. See Chapter 6: Status Register for more details.
For optimum performance the Buffer Enhanced Factory Program command should be
limited to a maximum of 100 program/erase cycles per block. If this limit is exceeded the
internal algorithm continues to work properly but some degradation in performance is
possible. Typical program times are provided in Table 23.
See Appendix C, Figure 28: Buffer enhanced factory program flowchart and pseudocode for
a suggested flowchart on using the Buffer Enhanced Factory Program command.



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