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M58PR256LE 数据表(PDF) 85 Page - STMicroelectronics |
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M58PR256LE 数据表(HTML) 85 Page - STMicroelectronics |
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85 / 119 page  M58PR256LE, M58PR512LE, M58PR001LE Part numbering 85/119 16 Part numbering Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. Table 35. Ordering information scheme Example: M58PR256L E 96 ZB 5 Device type M58 Architecture P = Multilevel, multiple bank, large buffer Operating voltage R = VDD = 1.7 V to 2.0 V, VDDQ = 1.7 V to 2.0 V Density 256 = 256 Mbit 512 = 512 Mbit 001 = 1 Gbit Technology L = 65 nm technology multilevel design Memory organization E = Uniform blocks Speed 96 = 96 ns Package Not packaged separately(1) 1. The M58PRxxxLE memories are only available as part of a multichip package device. Temperature range 5 = –30 to 85 °C |
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