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MPC8360 数据表(PDF) 22 Page - Freescale Semiconductor, Inc |
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MPC8360 数据表(HTML) 22 Page - Freescale Semiconductor, Inc |
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22 / 112 page ![]() MPC8360E/MPC8358E PowerQUICC™ II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 2 22 Freescale Semiconductor DDR and DDR2 SDRAM 6.2.2 DDR and DDR2 SDRAM Output AC Timing Specifications Table 20 and Table 21 provide the output AC timing specifications and measurement conditions for the DDR and DDR2 SDRAM interface. AC input high voltage VIH MVREF + 0.31 — V Notes: 1. Maximum possible skew between a data strobe (MDQS[n]) and any corresponding bit of data (MDQ[8n + {0...7}] if 0 ≤ n ≤ 7) or ECC (MECC[{0...7}] if n = 8). Table 19. DDR and DDR2 SDRAM Input AC Timing Specifications Mode for GVDD(typ) = 2.5 V At recommended operating conditions with GVDD of 2.5 V ± 5%. Parameter Symbol Min Max Unit Notes MDQS—MDQ/MECC input skew per byte 333 MHz 266 MHz 200 MHz tDISKEW -750 -1125 -1250 750 1125 1250 ps 1, 2 Notes: 1. AC timing values are based on the DDR data rate, which is twice the DDR memory bus frequency. 2. Maximum possible skew between a data strobe (MDQS[n]) and any corresponding bit of data (MDQ[8n + {0...7}] if 0 ≤ n ≤ 7) or ECC (MECC[{0...7}] if n = 8). Table 20. DDR and DDR2 SDRAM Output AC Timing Specifications for Source Synchronous Mode At recommended operating conditions with GVDD of (1.8 V or 2.5 V) ± 5%. Parameter 8 Symbol 1 Min Max Unit Notes MCK[n] cycle time, (MCK[n]/MCK[n] crossing) tMCK 610 ns 2 Skew between any MCK to ADDR/CMD 333 MHz 266 MHz 200 MHz tAOSKEW -1.0 -1.1 -1.2 0.2 0.3 0.4 ns 3 ADDR/CMD output setup with respect to MCK 333 MHz 266 MHz 200 MHz tDDKHAS 2.1 2.8 3.5 —ns 4 ADDR/CMD output hold with respect to MCK 333 MHz 266 MHz - DDR1 266 MHz - DDR2 200 MHz tDDKHAX 2.0 2.72.8 3.5 —ns 4 MCS(n) output setup with respect to MCK 333 MHz 266 MHz 200 MHz tDDKHCS 2.1 2.8 3.5 —ns 4 Table 18. DDR SDRAM Input AC Timing Specifications Mode for GVDD(typ) = 2.5 V (continued) At recommended operating conditions with GVDD of 2.5 V ± 5%. |
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