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MPC5200B 数据表(PDF) 18 Page - Freescale Semiconductor, Inc |
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MPC5200B 数据表(HTML) 18 Page - Freescale Semiconductor, Inc |
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18 / 72 page ![]() MPC5200B Data Sheet, Rev. 3 18 Freescale Semiconductor Figure 5. Timing Diagram—Standard SDRAM Memory Read Timing 1.3.6.2 Memory Interface Timing-Standard SDRAM Write Command In Standard SDRAM, all signals are activated on the MEM_CLK from the Memory Controller and captured on the MEM_CLK clock at the memory device. Table 19. Standard SDRAM Write Timing Sym Description Min Max Units SpecID tmem_clk MEM_CLK period 7.5 — ns A5.8 tvalid Control Signals, Address and MBA Valid after rising edge of MEM_CLK —tmem_clk*0.5+0.4 ns A5.9 thold Control Signals, Address and MBA Hold after rising edge of MEM_CLK tmem_clk*0.5 — ns A5.10 DMvalid DQM valid after rising edge of MEM_CLK — tmem_clk*0.25+0.4 ns A5.11 DMhold DQM hold after rising edge of Mem_clk tmem_clk*0.25-0.7 — ns A5.12 datavalid MDQ valid after rising edge of MEM_CLK — tmem_clk*0.75+0.4 ns A5.13 datahold MDQ hold after rising edge of MEM_CLK tmem_clk*0.75-0.7 — ns A5.14 MEM_CLK Control Signals MDQ (Data) MA (Address) NOTE: Control Signals are composed of RAS, CAS, MEM_WE, MEM_CS, MEM_CS1 and CLK_EN Active NOP READ NOP NOP NOP NOP thold Row Column MBA (Bank Selects) tvalid thold tvalid thold tvalid DQM (Data Mask) DMvalid DMhold NOP datahold datasetup |
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