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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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R8C/2G 数据表(PDF) 290 Page - Renesas Technology Corp |
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R8C/2G 数据表(HTML) 290 Page - Renesas Technology Corp |
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290 / 344 page  R8C/2G Group 20. Flash Memory Rev.1.00 Apr 04, 2008 Page 270 of 318 REJ09B0387-0100 20.7.1.4 How to Access Write 0 before writing 1 when setting Bits FMR01, FMR02 in the FMR0 register, or FMR11 bit in the FMR1 register to 1. Do not generate an interrupt between writing 0 and 1. 20.7.1.5 Rewriting User ROM Area In EW0 Mode, if the supply voltage drops while rewriting any block in which a rewrite control program is stored, it may not be possible to rewrite the flash memory because the rewrite control program cannot be rewritten correctly. In this case, use standard serial I/O mode. 20.7.1.6 Program Do not write additions to the already programmed address. 20.7.1.7 Program and Erase Voltage for Flash Memory To perform programming and erasure, use VCC = 2.7 V to 5.5 V as the supply voltage. Do not perform programming and erasure at less than 2.7 V. |
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