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ST7263BEx 数据表(PDF) 163 Page - STMicroelectronics |
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ST7263BEx 数据表(HTML) 163 Page - STMicroelectronics |
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163 / 186 page ![]() ST7263Bxx Electrical characteristics Doc ID 7516 Rev 8 163/186 Figure 77. Typical application with ADC Table 79. ADC accuracy with VDD=5 V, fCPU= 8 MHz, fADC=4 MHz, RAIN< 10 κΩ Symbol Parameter Typ Max(1)(2) 1. Data based on characterization results over the whole temperature range, not tested in production. 2. Data based on characterization results, to guarantee 99.73% within ± max value from 0 to 70 °C ( ± 3s distribution limits). |ET| Total unadjusted error(3) 3. ADC Accuracy vs. Negative Injection Current: For IINJ-=0.8mA, the typical leakage induced inside the die is 1.6µA and the effect on the ADC accuracy is a loss of 1 LSB for each 10K Ω increase of the external analog source impedance. This effect on the ADC accuracy has been observed under worst-case conditions for injection: - negative injection - injection to an input with analog capability, adjacent to the enabled Analog input - at 5V VDD supply, and worst case temperature. 1.5 2 |EO| Offset error(3) 0.5 1 |EG| Gain Error(3) 0.5 1.5 |ED| Differential linearity error(3) 11.5 |EL| Integral linearity error(3) 11.5 AINx ST72XXX CIO ~2pF VDD IL ±1 μA VT 0.6V VT 0.6V VAIN RAIN VDDA VSSA 0.1 μF VDD ADC |
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