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ST7LITE20F2 数据表(PDF) 131 Page - STMicroelectronics |
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ST7LITE20F2 数据表(HTML) 131 Page - STMicroelectronics |
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131 / 166 page ![]() ST7LITE20F2 ST7LITE25F2 ST7LITE29F2 Electrical characteristics Doc ID 8349 Rev 5 131/166 13.7 EMC characteristics Susceptibility tests are performed on a sample basis during product characterization. 13.7.1 Functional EMS (Electro Magnetic Susceptibility) Based on a simple running application on the product (toggling 2 LEDs through I/O ports), the product is stressed by two electro magnetic events until a failure occurs (indicated by the LEDs). ● ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2 standard. ● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V DD and VSS through a 100pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 1000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in the Table 76 based on the EMS levels and classes defined in application note AN1709. Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Software recommendations The software flowchart must include the management of runaway conditions such as: ● Corrupted program counter ● Unexpected reset ● Critical data corruption (control registers...) Table 75. EEPROM data memory Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for EEPROM write/erase − 2.4 − 5.5 V tprog Programming time for 1~32 bytes TA=−40 to +85°C − 510 ms tret Data retention(1) TA=+55°C (2) 20 −− years NRW Write erase cycles TA=+25°C 300K(3) −− cycles 1. Data based on reliability test results and monitored in production. 2. The data retention time increases when the TA decreases. 3. Design target value pending full product characterization. |
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