ST7LITE20F2 datasheet(130/166 Pages) STMICROELECTRONICS

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Electrical characteristics

ST7LITE20F2 ST7LITE25F2 ST7LITE29F2

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Doc ID 8349 Rev 5

Figure 66. Typical application with a crystal or ceramic resonator

13.6

Memory characteristics

TA = -40°C to 85°C, unless otherwise specified.

OSC2

OSC1

fOSC

CL1

CL2

RESONATOR

WHEN RESONATOR WITH

INTEGRATED CAPACITORS

ST7LITE2

Table 73.

RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode(1)

HALT mode (or RESET)

1.6

−−

Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware registers

(only in HALT mode). Guaranteed by construction, not tested in production.

Table 74.

Flash program memory

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for Flash write/erase

−

2.4

−

5.5

tprog

Programming time for 1~32 bytes(1)

TA=−40 to +85°C

−

510

Programming time for 1.5 kBytes

TA=+25°C

0.24

0.48

tRET

Data retention(2)

TA=+55°C

(3)

−−

years

NRW

Write erase cycles

TA=+25°C

10K(4)

−−

cycles

IDD

Supply current

Read / Write / Erase modes

fCPU = 8MHz, VDD = 5.5V

−−

2.6(5)

No Read/No Write mode

−−

100

μA

Power down mode / HALT

−

00.1

μA

Up to 32 bytes can be programmed at a time.

Data based on reliability test results and monitored in production.

The data retention time increases when the TA decreases.

Design target value pending full product characterization.

Guaranteed by Design. Not tested in production.

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