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ST7LITE20F2 数据表(PDF) 132 Page - STMicroelectronics

部件名 ST7LITE20F2
功能描述  8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, Timers, SPI
PDF  166 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST7LITE20F2 数据表(HTML) 132 Page - STMicroelectronics

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Electrical characteristics
ST7LITE20F2 ST7LITE25F2 ST7LITE29F2
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Doc ID 8349 Rev 5
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring.
Note:
For more details, refer to the application note AN1015.
13.7.2
Electro Magnetic Interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Note:
Data based on characterization results, not tested in production.
13.7.3
Absolute maximum ratings (Electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
Note:
For more details, refer to the application note AN1181.
Electro-Static Discharge (ESD)
Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard.
Table 76.
Test results
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz
conforms to IEC 1000-4-2
3B
VFFTB
Fast transient voltage burst limits to be
applied through 100pF on VDD and VDD
pins to induce a functional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz
conforms to IEC 1000-4-4
3B
Table 77.
Emission test
Symbol Parameter
Conditions
Monitored
Frequency Band
Max vs. [fOSC/fCPU]Unit
8/4MHz
16/8MHz
SEMI
Peak level
VDD=5V, TA=+25°C,
SO20 package,
conforming to SAE J 1752/3
0.1 MHz to 30 MHz
9
17
dB
μV
30 MHz to 130 MHz
31
36
130 MHz to 1 GHz
25
27
SAE EMI Level
3.5
4



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