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SPC560P34L1 数据表(PDF) 54 Page - STMicroelectronics

部件名 SPC560P34L1
功能描述  Programmable watchdog timer
PDF  103 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SPC560P34L1 数据表(HTML) 54 Page - STMicroelectronics

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Electrical characteristics
SPC560P34L1, SPC560P34L3, SPC560P40L1, SPC560P40L3
54/103
Doc ID 16100 Rev 7
3.6
Electromagnetic interference (EMI) characteristics
3.7
Electrostatic discharge (ESD) characteristics
3.8
Power management electrical characteristics
3.8.1
Voltage regulator electrical characteristics
The internal voltage regulator requires an external NPN ballast, approved ballast list
availbale in Table 15, to be connected as shown in Figure 10. Capacitances should be
placed on the board as near as possible to the associated pins. Care should also be taken
to limit the serial inductance of the VDD_HV_REG, BCTRL and VDD_LV_CORx pins to less than
LReg. (refer to Table 16).
Table 13.
EMI testing specifications
Symbol
Parameter
Conditions
Clocks
Frequency
Level
(Typ)
Unit
VEME
Radiated
emissions
VDD = 5.0 V; TA =25 °C
Other device configuration,
test conditions and EM testing
per standard IEC61967-2
fOSC =8 MHz
fCPU =64 MHz
No PLL frequency
modulation
150 kHz–150 MHz
11
dBµ
V
150–1000 MHz
13
IEC level
M
fOSC =8 MHz
fCPU =64 MHz
±4% PLL frequency
modulation
150 kHz–150 MHz
8
dBµ
V
150–1000 MHz
12
IEC level
N
VDD = 3.3 V; TA =25 °C
Other device configuration,
test conditions and EM testing
per standard IEC61967-2
fOSC =8 MHz
fCPU =64 MHz
No PLL frequency
modulation
150 kHz–150 MHz
9
dBµ
V
150–1000 MHz
12
IEC level
M
fOSC =8 MHz
fCPU =64 MHz
±4% PLL frequency
modulation
150 kHz–150 MHz
7
dBµ
V
150–1000 MHz
12
IEC level
N
Table 14.
ESD ratings(1),(2)
Symbol
Parameter
Conditions
Value
Unit
VESD(HBM)
S
R
Electrostatic discharge (Human Body Model)
2000
V
VESD(CDM)
S
R
Electrostatic discharge (Charged Device Model)
750 (corners)
V
500 (other)
1.
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
2.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification
requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at
room temperature followed by hot temperature, unless specified otherwise in the device specification.



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