SPC560P34L1 datasheet(75/103 Pages) STMICROELECTRONICS

75 / 103 page

SPC560P34L1, SPC560P34L3, SPC560P40L1, SPC560P40L3

Electrical characteristics

Doc ID 16100 Rev 7

75/103

3.15.2

Flash memory power supply DC characteristics

Table 34 shows the power supply DC characteristics on external supply.

Table 32.

Flash memory module life

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

P/E

Number of program/erase cycles per

block for 16 KB blocks over the

operating temperature range (TJ)

—

100000

—

cycles

P/E

Number of program/erase cycles per

block for 32 KB blocks over the

operating temperature range (TJ)

—

10000

100000 cycles

P/E

Number of program/erase cycles per

block for 128 KB blocks over the

operating temperature range (TJ)

—

1000

100000 cycles

Retention C

Minimum data retention at 85 °C

average ambient temperature(1)

Blocks with 0–1000 P/E cycles

—

years

Blocks with 10000 P/E cycles

—

years

Blocks with 100000 P/E cycles

—

years

Ambient temperature averaged over duration of application, not to exceed recommended product operating temperature

range.

Table 33.

Flash memory read access timing

Symbol

Parameter

Conditions(1)

Max value

Unit

fmax

Maximum working frequency for code flash memory at given

number of wait states in worst conditions

2 wait states

MHz

0 wait states

fmax

Maximum working frequency for data flash memory at given

number of wait states in worst conditions

8 wait states

MHz

VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified

Table 34.

Flash memory power supply DC electrical characteristics

Symbol

Parameter

Conditions(1)

Value

Unit

Min

Typ

Max

IFLPW

Sum of the current consumption on VDD_HV_IOx

and VDD_LV_CORx during low-power mode

Code flash memory

—

900

µA

IFPWD

Sum of the current consumption on VDD_HV_IOx

and VDD_LV_CORx during power-down mode

Code flash memory

—

150

µA

Data flash memory

—

150

VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.

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