ST10F167 datasheet(14/69 Pages) STMICROELECTRONICS

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ST10F167

FLASH MEMORY

The ST10F167 provides 128KBytes of on-chip,

electrically erasable and re-programmable Flash

EPROM. The flash memory is organized in 32 bit

wide blocks. This allows double word instructions

to be fetched in one machine cycle. The flash

memory can be used for both code and data stor-

age. The flash memory is organised into four

banks of sizes 8K, 24K, 48K and 48Kbytes (table

6.1). Each of these banks can be erased inde-

pendently. This prevents unnecessary re-pro-

gramming of the whole flash memory when only a

partial re-programming is required.

The first 32K bytes of the FLASH memory are lo-

cated in segment 0 (0h to 007FFFh) during reset,

and include the reset and interrupt vectors. The

rest of the FLASH memory is mapped in segments

1 and 2 (018000h to 02FFFFh). For flexibility, the

first 32K bytes of the FLASH memory may be rem-

apped to segment 1 (010000h to 017FFFh) during

initialization. This allows the interrupt vectors to be

programmed from the external memory, while re-

taining the common routines and constants that

are programmed into the FLASH memory.

6.1

Flash Memory Programming And Erasure

The FLASH memory is programmed using the

PRESTO F Program Write algorithm. Erasure of

the FLASH memory is performed in the program

mode using the PRESTO F Erase algorithm.

Timing of the Write/Erase cycles is automatically

generated by a programmable timer and comple-

tion is indicated by a flag. A second flag indicates

that the V

PP voltage was correct for the whole pro-

gramming cycle. This

guarantees that a good

write/erase operation has been carried out.

The FLASH parameters are detailed below.

Table 6.1

FLASH Memory Bank Organisation

Bank

Addresses (Segment 0)

Size (bytes)

000000h to 07FFFh and 018000h to 01BFFFh

01C000h to 027FFFh

028000h to 02DFFFh

02E000h to 02FFFFh

48K

24K

Table 6.2

Flash Parameters

Parameter

Units

Min

Typical

Max

Word Programming Time

µsec

12.8

1250

Bank Erasing Time

sec

0.5

Endurance

cycles

1000

Flash Vpp

volts

11.4

12.6

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