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ST7263BEx 数据表(PDF) 145 Page - STMicroelectronics |
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ST7263BEx 数据表(HTML) 145 Page - STMicroelectronics |
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145 / 186 page ![]() ST7263Bxx Electrical characteristics Doc ID 7516 Rev 8 145/186 Figure 58. Typical application with a crystal resonator 13.6 Memory characteristics Subject to general operating conditions for fCPU, and TA unless otherwise specified. 13.6.1 Flash memory Operating Conditions: fCPU = 8 MHz. OSCOUT OSCIN fOSC CL1 CL2 i2 RF ST72XXX RESONATOR Table 64. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Guaranteed by design. Not tested in production. Halt mode (or RESET) 2.0 - - V Table 65. Dual voltage Flash memory(1) 1. Refer to the Flash programming reference manual for the typical HDFlash programming and erase timing values. Symbol Parameter Conditions Min Typ Max Unit fCPU Operating frequency Read mode - - 8 MHz Write / Erase mode, TA=25 °C -- 8 VPP Programming voltage 4.0 V ≤V DD ≤ 5.5 V 11.4 - 12.6 V IPP VPP current Write / Erase - 30 - mA tVPP Internal VPP stabilization time - 10 - µs tRET Data retention TA ≤ 5 5°C 40 - - years NRW Write/erase cycles TA=25 °C 100 - - cycles |
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