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TDA4VEN...Q1 数据表(PDF) 83 Page - Texas Instruments |
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TDA4VEN...Q1 数据表(HTML) 83 Page - Texas Instruments |
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83 / 236 page ![]() T overshoot T undershoot T period Overshoot = 20% of nominal IO supply voltage Undershoot = 20% of nominal IO supply voltage A. Tovershoot + Tundershoot < 20% of Tperiod Figure 6-1. IO Transient Voltage Ranges 6.2 ESD Ratings for AEC - Q100 Qualified Devices in the AMW Package VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC - Q100-002(1) ±1000 V Charged-device model (CDM), per AEC - Q100-011 Corner pins (A1, A25, AE1, and AE25) ±750 All other pins ±250 (1) AEC - Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 Power-On Hours (POH) POWER ON HOURS (POH)(1) (2) (3) JUNCTION TEMPERATURE RANGE (TJ)(4) LIFETIME (POH) –40°C to 105°C 100000 –40°C to 125°C 20000(5) (1) This information is provided solely for your convenience and does not extend or modify the warranty provided under TI's standard terms and conditions for TI semiconductor products. (2) Unless specified in the table above, all voltage domains and operating conditions are supported in the device at the noted temperatures. (3) POH is a function of voltage, temperature and time. Usage at higher voltages and temperatures will result in a reduction in POH. (4) Either –40 to 105C or –40 to 125C profile should be chosen and applied through the lifetime of the application. Mixing of these profiles for the purposes of extending temperature and/or POH may result in increased reliability failure risk and is not recommended. (5) The –40 to 125C profile is defined as 20000 power on hours with a junction temperature as follows: 5%@–40°C, 65%@70°C, 20%@110°C, and 10%@125°C. www.ti.com TDA4VEN-Q1, TDA4AEN-Q1 SPRSP96A – MARCH 2024 – REVISED SEPTEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 83 Product Folder Links: TDA4VEN-Q1 TDA4AEN-Q1 |
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