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R8C/2G 数据表(PDF) 271 Page - Renesas Technology Corp |
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R8C/2G 数据表(HTML) 271 Page - Renesas Technology Corp |
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271 / 344 page ![]() R8C/2G Group 20. Flash Memory Rev.1.00 Apr 04, 2008 Page 251 of 318 REJ09B0387-0100 NOTE: 1. When FFh is written in the 2nd byte of the block erase command, the MCU enters read array mode, and the command code written in the 1st byte is disabled. Table 20.4 Errors and FMR0 Register Status FMR0 Register (Status Register) Status Error Error Occurrence Condition FMR07(SR5) FMR06(SR4) 1 1 Command sequence error • When a command is not written correctly. • When D0h or FFh is not written in the 2nd byte of the block erase command.(1) • When the program command or block erase command is executed while rewriting is disabled by the FMR02 bit in the FMR0 register, or the FMR15 or FMR16 bit in the FMR1 register. • When an address not allocated in flash memory is input during erase command input • When attempting to erase the block for which rewriting is disabled during erase command input. • When an address not allocated in flash memory is input during write command input. • When attempting to write to a block for which rewriting is disabled during write command input. 1 0 Erase error • When the block erase command is executed but auto-erasure does not complete correctly 0 1 Program error • When the program command is executed but not auto-programming does not complete. 0 0 Completed successfully – |
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