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HD64F2149YV 数据表(PDF) 743 Page - Renesas Technology Corp |
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HD64F2149YV 数据表(HTML) 743 Page - Renesas Technology Corp |
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743 / 1075 page ![]() Section 22 ROM Rev. 3.00 Jan 18, 2006 page 715 of 1044 REJ09B0280-0300 End of erasing Start Set SWE bit in FLMCR1 Set ESU bit in FLMCR2 Set E bit in FLMCR1 Wait (x) µs Wait (y) µs n = 1 Set EBR1, EBR2 Enable WDT *5 *5 *3 Wait (z) ms *5 Wait ( α) µs *5 Wait ( β) µs *5 Wait ( γ) µs Set block start address to verify address *5 Wait ( ε) µs *5 *2 *5 Wait ( η) µs *5 *5 *4 Start of erase Clear E bit in FLMCR1 Clear ESU bit in FLMCR2 Set EV bit in FLMCR1 H'FF dummy write to verify address Read verify data Clear EV bit in FLMCR1 Wait ( η) µs Clear EV bit in FLMCR1 Clear SWE bit in FLMCR1 Disable WDT Halt erase *1 Verify data = all 1? Last address of block? End of erasing of all erase blocks? Erase failure Clear SWE bit in FLMCR1 n ≥ N? NG NG NG NG OK OK OK OK n ← n + 1 Increment address Wait ( θ) µs Wait ( θ) µs Notes: 1. Preprogramming (setting erase block data to all 0) is not necessary. 2. Verify data is read in 16-bit (W) units. 3. Set only one bit in EBR1or EBR2. More than one bit cannot be set. 4. Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially. 5. See section 25.6, Flash Memory Characteristics, for the values of x, y, z, α, β, γ, ε, η, θ, and N. Figure 22.13 Erase/Erase-Verify Flowchart (Single-Block Erase) |
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