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HD64F2149YV 数据表(PDF) 749 Page - Renesas Technology Corp |
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HD64F2149YV 数据表(HTML) 749 Page - Renesas Technology Corp |
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749 / 1075 page ![]() Section 22 ROM Rev. 3.00 Jan 18, 2006 page 721 of 1044 REJ09B0280-0300 22.10.3 Programmer Mode Operation Table 22.12 shows how the different operating modes are set when using programmer mode, and table 22.13 lists the commands used in programmer mode. Details of each mode are given below. • Memory Read Mode Memory read mode supports byte reads. • Auto-Program Mode Auto-program mode supports programming of 128 bytes at a time. Status polling is used to confirm the end of auto-programming. • Auto-Erase Mode Auto-erase mode supports automatic erasing of the entire flash memory. Status polling is used to confirm the end of auto-erasing. • Status Read Mode Status polling is used for auto-programming and auto-erasing, and normal termination can be confirmed by reading the FO6 signal. In status read mode, error information is output if an error occurs. Table 22.12 Settings for Each Operating Mode in Programmer Mode Pin Names Mode CE CE CE CE OE OE OE OE WE WE WE WE FO0 to FO7 FA0 to FA17 Read L L H Data output Ain* 2 Output disable L H H Hi-Z X Command write L H L Data input Ain* 2 Chip disable* 1 HX X Hi-Z X Notes: 1. Chip disable is not a standby state; internally, it is an operation state. 2. Ain indicates that there is also address input in auto-program mode. |
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