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HD64F2149YV 数据表(PDF) 818 Page - Renesas Technology Corp |
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HD64F2149YV 数据表(HTML) 818 Page - Renesas Technology Corp |
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818 / 1075 page ![]() Section 25 Electrical Characteristics Rev. 3.00 Jan 18, 2006 page 790 of 1044 REJ09B0280-0300 tRSD2 φ T1 AS* A23 to A0, IOS* T1 tACC1 D15 to D0 (read) T2 or T3 tRDH tAD RD (read) tRDS Note: * AS and IOS are the same pin. The function is selected by the IOSE bit in SYSCR. Figure 25.13 Burst ROM Access Timing (One-State Access) |
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