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MC56F81663 数据表(PDF) 61 Page - NXP Semiconductors |
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MC56F81663 数据表(HTML) 61 Page - NXP Semiconductors |
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61 / 73 page ![]() PWMs and timers 11.6.1 Enhanced NanoEdge PWM characteristics Table 32. NanoEdge PWM timing parameters Characteristic Symbol Min Typ Max Unit PWM clock frequency 100 MHz NanoEdge Placement (NEP) Step Size1, 2 pwmp 312 ps Delay for fault input activating to PWM output deactivated 1 33 ns Power-up Time3 tpu 25 µs Resolution of Deadtime 312 ps 1. Reference IPbus clock of 100 MHz in NanoEdge Placement mode. 2. Temperature and voltage variations do not affect NanoEdge Placement step size. 3. Powerdown to NanoEdge mode transition. 11.6.2 Quad Timer timing Parameters listed are guaranteed by design. Table 33. Timer timing Characteristic Symbol Min1 Max Unit See Figure Timer input period PIN 2T + 6 — ns Figure 14 Timer input high/low period PINHL 1T + 3 — ns Figure 14 Timer output period POUT 20 — ns Figure 14 Timer output high/low period POUTHL 10 — ns Figure 14 1. T = clock cycle. For 100 MHz operation, T = 10 ns. POUT POUTHL POUTHL PIN PINHL PINHL Timer Inputs Timer Outputs Figure 14. Timer timing 11.6 PWMs and timers MC56F81xxx, Rev. 1.1, 12/2020 NXP Semiconductors 61 |
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