| 数据搜索系统,热门电子元器件搜索 |
|
MC56F81663 数据表(PDF) 68 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
MC56F81663 数据表(HTML) 68 Page - NXP Semiconductors |
|
68 / 73 page ![]() PD = Power dissipation in the package (W). The junction-to-ambient thermal resistance is an industry-standard value that provides a quick and easy estimation of thermal performance. Unfortunately, there are two values in common usage: the value determined on a single-layer board and the value obtained on a board with two planes. For packages such as the PBGA, these values can be different by a factor of two. Which TJ value is closer to the application depends on the power dissipated by other components on the board. • The TJ value obtained on a single layer board is appropriate for a tightly packed printed circuit board. • The TJ value obtained on a board with the internal planes is usually appropriate if the board has low-power dissipation and if the components are well separated. When a heat sink is used, the thermal resistance is expressed as the sum of a junction-to- case thermal resistance and a case-to-ambient thermal resistance: RΘJA = RΘJC + RΘCA where RΘJA = Package junction-to-ambient thermal resistance (°C/W) RΘJC = Package junction-to-case thermal resistance (°C/W) RΘCA = Package case-to-ambient thermal resistance (°C/W). RΘJC is device related and cannot be adjusted. You control the thermal environment to change the case to ambient thermal resistance, RΘCA. For instance, you can change the size of the heat sink, the air flow around the device, the interface material, the mounting arrangement on printed circuit board, or change the thermal dissipation on the printed circuit board surrounding the device. To determine the junction temperature of the device in the application when heat sinks are not used, the thermal characterization parameter ( ΨJT) can be used to determine the junction temperature with a measurement of the temperature at the top center of the package case using the following equation: TJ = TT + (ΨJT × PD) where TT = Thermocouple temperature on top of package (°C/W) ΨJT = hermal characterization parameter (°C/W) PD = Power dissipation in package (W). Design Considerations MC56F81xxx, Rev. 1.1, 12/2020 68 NXP Semiconductors |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |