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TMP86FS49AIUG 数据表(PDF) 241 Page - Toshiba Semiconductor |
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TMP86FS49AIUG 数据表(HTML) 241 Page - Toshiba Semiconductor |
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241 / 296 page ![]() Page 225 TMP86FS49AIUG 19.2 Command Sequence The command sequence in the MCU and the serial PROM modes consists of six commands (JEDEC compatible), as shown in Table 19-2. Addresses specified in the command sequence are recognized with the lower 12 bits (excluding BA, SA, and FF7FH used for read protection). The upper 4 bits are used to specify the flash memory area, as shown in Table 19-3. Note 1: Set the address and data to be written. Note 2: The area to be erased is specified with the upper 4 bits of the address. 19.2.1 Byte Program This command writes the flash memory for each byte unit. The addresses and data to be written are specified in the 4th bus write cycle. Each byte can be programmed in a maximum of 40 µs. The next command sequence cannot be executed until the write operation is completed. To check the completion of the write operation, per- form read operations repeatedly until the same data is read twice from the same address in the flash memory. During the write operation, any consecutive attempts to read from the same address is reversed bit 6 of the data (toggling between 0 and 1). Note:To rewrite data to Flash memory addresses at which data (including FFH) is already written, make sure to erase the existing data by "sector erase" or "chip erase" before rewriting data. 19.2.2 Sector Erase (4-kbyte Erase) This command erases the flash memory in units of 4 kbytes. The flash memory area to be erased is specified by the upper 4 bits of the 6th bus write cycle address. For example, in the MCU mode, to erase 4 kbytes from 7000H to 7FFFH, specify one of the addresses in 7000H-7FFFH as the 6th bus write cycle. In the serial PROM mode, to erase 4 kbytes from 7000H to 7FFFH, set FLSCR<BANKSEL> to "0" and then specify one of the addresses in F000H-FFFFH as the 6th bus write cycle. The sector erase command is effective only in the MCU and serial PROM modes, and it cannot be used in the parallel PROM mode. Table 19-2 Command Sequence Command Sequence 1st Bus Write Cycle 2nd Bus Write Cycle 3rd Bus Write Cycle 4th Bus Write Cycle 5th Bus Write Cycle 6th Bus Write Cycle Address Data Address Data Address Data Address Data Address Data Address Data 1 Byte program 555H AAH AAAH 55H 555H A0H BA (Note 1) Data (Note 1) ---- 2 Sector Erase (4-kbyte Erase) 555H AAH AAAH 55H 555H 80H 555H AAH AAAH 55H SA (Note 2) 30H 3 Chip Erase (All Erase) 555H AAH AAAH 55H 555H 80H 555H AAH AAAH 55H 555H 10H 4 Product ID Entry 555H AAH AAAH 55H 555H 90H ------ 5 Product ID Exit XXH F0H --- ------- Product ID Exit 555H AAH AAAH 55H 555H F0H ------ 6 Read Protect 555H AAH AAAH 55H 555H A5H FF7FH 00H ---- Table 19-3 Address Specification in the Command Sequence Operating Mode FLSCR <BANKSEL> Specified Address MCU mode Don’t care 1***H-F***H Serial PROM mode 0 (BANK0) 9***H-F***H 1 (BANK1) 8***H-F***H |
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