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TMP86FS49AIUG 数据表(PDF) 288 Page - Toshiba Semiconductor |
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TMP86FS49AIUG 数据表(HTML) 288 Page - Toshiba Semiconductor |
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288 / 296 page ![]() Page 272 22. Electrical Characteristics 22.6 Flash Characteristics TMP86FS49AIUG 22.5 AC Characteristics 22.6 Flash Characteristics 22.6.1 Write/Retention Characteristics (VSS = 0 V, 4.5 V ≤ VDD ≤ 5.5 V, Topr = -40 to 85°C) Parameter Symbol Condition Min Typ. Max Unit Machine cycle time tcy NORMAL1, 2 modes 0.25 – 4 µs IDLE0, 1, 2 modes SLOW1, 2 modes 117.6 – 133.3 SLEEP0, 1, 2 modes High-level clock pulse width tWCH For external clock operation (XIN input) fc = 16 MHz – 31.25 – ns Low-level clock pulse width tWCL High-level clock pulse width tWSH For external clock operation (XTIN input) fs = 32.768 kHz – 15.26 – µs Low-level clock pulse width tWSL (VSS = 0 V, 3.0 V ≤ VDD < 4.5 V, Topr = -40 to 85°C) Paramete Symbol Condition Min Typ. Max Unit Machine cycle time tcy NORMAL1, 2 modes 0.5 – 4 µs IDLE0, 1, 2 modes SLOW1, 2 modes 117.6 – 133.3 SLEEP0, 1, 2 modes High-level clock pulse width tWCH For external clock operation (XIN input) fc = 8 MHz – 62.5 – ns Low-level clock pulse width tWCL High-level clock pulse width tWSH For external clock operation (XTIN input) fs = 32.768 kHz – 15.26 – µs Low-level clock pulse width tWSL (VSS = 0 V) Paramete Condition Min Typ. Max. Unit Number of guaranteed writes to flash memory VSS = 0 V, Topr = -10 to 40°C – – 100 Times |
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