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LPC802 数据表(PDF) 57 Page - NXP Semiconductors |
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LPC802 数据表(HTML) 57 Page - NXP Semiconductors |
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57 / 83 page ![]() LPC802 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved. Product data sheet Rev. 1.6 — 27 April 2018 57 of 83 NXP Semiconductors LPC802 32-bit ARM Cortex-M0+ microcontroller 13.8 Wake-up process [1] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages. [2] The wake-up time measured is the time between when a GPIO input pin is triggered to wake the device up from the low power modes and from when a GPIO output pin is set in the interrupt service routine (ISR) wake-up handler. ISR is located in SRAM. [3] FRO enabled, all peripherals off. [4] Wake up from deep power-down causes the part to go through entire reset process. The wake-up time measured is the time between when the Wake-Up pin is triggered to wake the device up and when a GPIO output pin is set in the reset handler. 14. Characteristics of analog peripherals 14.1 BOD [1] Interrupt levels are selected by writing the level value to the BOD control register BODCTRL, see the LPC802 user manual. Table 23. Dynamic characteristic: Typical wake-up times from low power modes VDD = 3.3 V;Tamb =25 C; Using FRO (15 MHz) as the system clock. Symbol Parameter Conditions Min Typ[1] Max Unit twake wake-up time from sleep mode [2][3] -1.97 - s from deep-sleep mode [2] -2.07 - s from power-down mode [2] -25 - s from deep power-down mode [4] -313 - s Table 24. BOD static characteristics[1] Tamb =25 C. Symbol Parameter Conditions Min Typ Max Unit Vth threshold voltage interrupt level 1 assertion - 2.24 - V de-assertion - 2.40 - V interrupt level 2 assertion - 2.52 - V de-assertion - 2.64 - V interrupt level 3 assertion - 2.81 - V de-assertion - 2.90 - V reset level 0 assertion - 1.51 - V de-assertion - 1.54 - V |
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