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EM6812F2TP24B 数据表(PDF) 77 Page - EM Microelectronic - MARIN SA |
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EM6812F2TP24B 数据表(HTML) 77 Page - EM Microelectronic - MARIN SA |
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77 / 81 page  R EM6812 Copyright © 2005, EM Microelectronic-Marin SA 77 www.emmicroelectronic.com 17 Electrical Specification 17.1 Absolute Maximum Ratings Min. Max. Units Power supply VDD-VSS - 0.2 +6.0 V Input voltage VSS – 0.2 VDD+0.2 V Storage temperature - 40 + 125 °C Electrostatic discharge to Mil-Std-883C method 3015.7 with ref. to VSS -2000 +2000 V Maximum soldering conditions Packages are Green-Mold and Lead-free As per Jedec J-STD-020C Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified electrical characteristics may affect device reliability or cause malfunction 17.2 Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions should be taken as for any other CMOS integrated circuit. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the supply voltage range. 17.3 Standard Operating Conditions Parameter MIN TYP MAX Unit Description Temperature -40 25 85 °C VDD _Range 2 3.0 5.5 V IVSS max 80 mA Maximum current out of VSS Pin IVDD max 80 mA Maximum current into VDD Pin VSS 0 V Reference terminal CVREG (note 1) 470 nF regulated voltage capacitor Flash data retention 10 yrs Read and Erase state retention Note 1: This capacitor filters switching noise from VDD to keep it away from the internal logic cells. In noisy systems the capacitor should be chosen bigger than minimum value. 17.4 Typical Crystal specification Fq 32768 Hz nominal frequency Rqs 35 KOhm typical quartz serial resistance CL 8.2 pF typical quartz load capacitance df/f ± 30 ppm quartz frequency tolerance Watch type crystal oscillator (i.e Microcrystal DS15 ), connected between QIN and Qout terminal. 17.5 DC Characteristics - Power Supply Currents Parameter Conditions Symbol Min. Typ. Max. Unit VDD =3V, 25°C, RCDiv=2 IVDDa10_d2 800 1200 µA ACTIVE Supply Current CPU on RC=10MHz VDD =3V, -40 to 85°C, RCDiv=2 IVDDa10_d2 800 1400 µA VDD =3V, 25°C, RCDiv=1 IVDDh10_d1 80 110 µA Standby Supply Current RC=10MHz enabled VDD =3V, -40 to 85°C, RCDiv=1 IVDDh10_d1 80 120 µA VDD =3V, 25°C, RCDiv=1 IVDDa1_d1 120 170 µA VDD =3V, -40 to 85°C, RCDiv=1 IVDDa1_d1 120 180 µA Active Supply Current CPU on RC=1MHz VDD =3V, 25°C; RCDiv=8 IVDDa1_d8 45 µA VDD =3V, 25°C, RCDiv=1 IVDDh1_d1 10 13.7 µA VDD =3V, -40 to 85°C, RCDiv=1 IVDDh1_d1 10 15 µA Standby Supply Current RC=1MHz enabled VDD =3V, 25°C, RCDiv=8 IVDDh1_d8 6 µA VDD =3V, 25°C, RC off IVDDa32 8 10 µA Active Supply Current CPU on Xtal 32KHz VDD =3V, -40 to 85°C, RC off IVDDa32 8 12 µA VDD =3V, 25°C, RC off IVDDh32 0.8 1 µA Standby Supply Current CPU on Xtal 32KHz VDD =3V, -40 to 85°C, RC off IVDDh32 0.8 1.2 µA BrownOut or SVLD consumption VDD =3V, -40 to 85°C IVDDa32 6 µA VDD =3V, 25°C IVDDs1 0.16 0.3 µA SLEEP Supply Current VDD =3V, -40 to 85°C IVDDs1 0.16 0.6 µA Active supply currents are measured using a checkerboard read-write loop in the low power RAM. |
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