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EDBA164B4PR-1DITF-R 数据表(PDF) 42 Page - Micron Technology |
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EDBA164B4PR-1DITF-R 数据表(HTML) 42 Page - Micron Technology |
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42 / 152 page ![]() Table 43: Reserved Mode Registers Mode Reg- ister MA Address Restriction OP7 OP6 OP5 OP4 OP3 OP2 OP1 OP0 MR[18:19] MA[7:0] 12h–13h RFU Reserved MR[20:31] 14h–1Fh NVM1 MR[33:39] 21h–27h DNU1 MR[41:47] 29h–2Fh MR[48:62] 30h–3Eh RFU MR[64:126] 40h–7Eh RFU MR127 7Fh DNU MR[128:190] 80h–BEh RVU1 MR191 BFh DNU MR[192:254] C0h–FEh RVU MR255 FFh DNU Note: 1. NVM = nonvolatile memory use only; DNU = Do not use; RVU = Reserved for vendor use. Table 44: MR32 DQ Calibration Pattern A (MA[7:0] = 20H) MR32 Reads Reads to MR32 return DQ Calibration Pattern A Table 45: MR40 DQ Calibration Pattern B (MA[7:0] = 28H) MR40 Reads Reads to MR40 return DQ Calibration Pattern B Table 46: MR63 RESET (MA[7:0] = 3Fh) – MRW Only OP7 OP6 OP5 OP4 OP3 OP2 OP1 OP0 X Note: 1. For additional information on MRW RESET see MODE REGISTER WRITE Command. Commands and Timing The setup and hold timings shown in the figures below apply for all commands. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Commands and Timing 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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