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EDBA164B4PR-1DITF-R 数据表(PDF) 14 Page - Micron Technology

部件名 EDBA164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DITF-R 数据表(HTML) 14 Page - Micron Technology

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Table 7: IDD Specifications – Dual Die, Dual Channel (Continued)
VDD2, VDDQ = 1.14–1.30V; VDD1 = 1.70–1.95V; TC = –40°C to +105°C
Symbol
Supply
Speed
Unit
Parameter/Condition
1066
IDD3NS1
VDD1
2.8
mA
All devices in active non power-down standby current
with clock stop
CK_t = LOW, CK_c = HIGH; CKE is HIGH;
CS_n is HIGH; One bank is active;
CA bus inputs are STABLE;
Data bus inputs are STABLE
IDD3NS2
VDD2, VDDQ
30
IDD4R1
VDD1
4
mA
All devices in operating burst read
tCK = tCK(avg) MIN;
CS_n is HIGH between valid commands;
One bank is active; BL = 4; RL = RL (MIN);
CA bus inputs are SWITCHING;
50% data change occurs at each burst transfer
IDD4R2
VDD2, VDDQ
840
IDD4W1
VDD1
4
mA
All devices in operating burst write
tCK = tCK(avg) MIN;
CS_n is HIGH between valid commands;
One bank is active; BL = 4; WL = WL (MIN);
CA bus inputs are SWITCHING;
50% data change occurs at each burst transfer
IDD4W2
VDD2, VDDQ
300
IDD51
VDD1
40
mA
All devices in all bank auto-refresh
tCK = tCK(avg) MIN;
CKE is HIGH between valid commands;
tRC = tRFCab (MIN); Burst refresh;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE
IDD52
VDD2, VDDQ
240
IDD5AB1
VDD1
12
mA
All devices in all bank auto-refresh
tCK = tCK(avg) MIN;
CKE is HIGH between valid commands;
tRC = tREFI;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE
IDD5AB2
VDD2, VDDQ
56
IDD5PB1
VDD1
12
mA
All devices in per bank auto-refresh
tCK = tCK(avg) MIN;
CKE is HIGH between valid commands;
tRC = tREFIpb;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE
IDD5PB2
VDD2, VDDQ
56
Notes:
1. Published IDD values are the maximum of the distribution of the arithmetic mean.
2. IDD current specifications are tested after the device is properly initialized.
3. VDD2 and VDDQ are connected internally in the package.
4. The Quad die product IDD for each channel will be the sum of the IDD's for the state of
operation for each rank (CS) in the channel.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
IDD Specifications
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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