EDBA164B4PR-1DITF-R datasheet(88/152 Pages) MICRON

部件名	EDBA164B4PR-1DITF-R

功能描述	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features

PDF	152 Pages

Scroll/Zoom	100%

制造商	MICRON [Micron Technology]

网页	http://www.micron.com

标志

88 / 152 page

Figure 60: READ with Auto Precharge to Power-Down Entry

CK_c

CKE1, 2

Tx + 1

Tx + 2

Tx + 3

Tx + 4

Tx + 5

Tx + 6

Tx + 7

Tx + 8

Tx + 9

CMD

DQS_c

READ w/AP

PRE4

OUT DOUT DOUT DOUT

tISCKE

BL/23

READ w/AP

PRE4

BL/23

CKE1, 2

Tx + 1

Tx + 2

Tx + 3

Tx + 4

Tx + 5

Tx + 6

Tx + 7

Tx + 8

Tx + 9

CMD

OUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT

tISCKE

BL = 4

BL = 8

CK_t

DQS_t

CK_c

DQS_c

CK_t

DQS_t

Notes:

1. CKE must be held HIGH until the end of the burst operation.

2. CKE can be registered LOW at (RL + RU(tDQSCK/tCK)+ BL/2 + 1) clock cycles after the

clock on which the READ command is registered.

3. BL/2 with tRTP = 7.5ns and tRAS (MIN) is satisfied.

4. Start internal PRECHARGE.

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM

Power-Down

09005aef85eb530a

216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

EDBA164B4PR-1DITF-R 数据表(PDF) 88 Page - Micron Technology

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