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EDBA164B4PR-1DITF-R 数据表(PDF) 99 Page - Micron Technology

部件名 EDBA164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DITF-R 数据表(HTML) 99 Page - Micron Technology

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Resetting MR reading: Starts with registration of the MRR command and ends when
tMRR is met. After tMRR is met, the device is in the all banks idle state.
Active MR reading: Starts with registration of the MRR command and ends when tMRR
is met. After tMRR is met, the bank is in the active state.
MR writing: Starts with registration of the MRW command and ends when tMRW is met.
After tMRW is met, the device is in the all banks idle state.
Precharging all: Starts with registration of a PRECHARGE ALL command and ends when
tRP is met. After tRP is met, the device is in the all banks idle state.
6. Bank-specific; requires that the bank is idle and no bursts are in progress.
7. Not bank-specific; requires that all banks are idle and no bursts are in progress.
8. Not bank-specific.
9. This command may or may not be bank specific. If all banks are being precharged, they
must be in a valid state for precharging.
10. If a PRECHARGE command is issued to a bank in the idle state, tRP still applies.
11. A command other than NOP should not be issued to the same bank while a burst READ
or burst WRITE with auto precharge is enabled.
12. The new READ or WRITE command could be auto precharge enabled or auto precharge
disabled.
13. A WRITE command can be issued after the completion of the READ burst; otherwise, a
BST must be issued to end the READ prior to asserting a WRITE command.
14. Not bank-specific. The BST command affects the most recent READ/WRITE burst started
by the most recent READ/WRITE command, regardless of bank.
15. A READ command can be issued after completion of the WRITE burst; otherwise, a BST
must be used to end the WRITE prior to asserting another READ command.
Table 57: Current State Bank n to Command to Bank m Truth Table
Notes 1–6 apply to all parameters and conditions
Current State
of Bank n
Command to Bank m Operation
Next State for Bank m
Notes
Any
NOP
Continue previous operation
Current state of bank m
Idle
Any
Any command supported to bank m
–7
Row activating,
active, or pre-
charging
ACTIVATE
Select and activate row in bank m
Active
8
READ
Select column and start READ burst
from bank m
Reading
9
WRITE
Select column and start WRITE burst to
bank m
Writing
9
PRECHARGE
Deactivate row(s) in bank or banks
Precharging
10
MRR
READ value from mode register
Idle MR reading or active
MR reading
11, 12, 13
BST
READ or WRITE burst terminates an on-
going READ/WRITE from/to bank m
Active
7
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Truth Tables
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
99
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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