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EDBA164B4PR-1DITF-R 数据表(PDF) 76 Page - Micron Technology

部件名 EDBA164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DITF-R 数据表(HTML) 76 Page - Micron Technology

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MODE REGISTER READ
The MODE REGISTER READ (MRR) command is used to read configuration and status
data from SDRAM mode registers. The MRR command is initiated with CS_n LOW, CA0
LOW, CA1 LOW, CA2 LOW, and CA3 HIGH at the rising edge of the clock. The mode reg-
ister is selected by CA1f–CA0f and CA9r–CA4r. The mode register contents are available
on the first data beat of DQ[7:0] after RL × tCK + tDQSCK + tDQSQ and following the ris-
ing edge of the clock where MRR is issued. Subsequent data beats contain valid but un-
defined content, except in the case of the DQ calibration function, where subsequent
data beats contain valid content as described in the Data Calibration Pattern Descrip-
tion table. All DQS_t,DQS_c are toggled for the duration of the mode register READ
burst.
The MRR command has a burst length of four. MRR operation (consisting of the MRR
command and the corresponding data traffic) must not be interrupted. The MRR com-
mand period (tMRR) is two clock cycles. The MRR command issued to reserved and
write-only registers should returns valid but undefined content on all data beats, and
DQS_t, DQS_c should be toggled.
Figure 49: MRR Timing – RL = 3, tMRR = 2
Register
A
Register
A
MRR1
NOP2
NOP2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_c
CK_t
CA[9:0]
CMD
DQS_c
DQS_t
DQ[7:0]3
RL = 3
MRR1
Valid
tMRR = 2
tMRR = 2
DQ[MAX:8]
Register
B
Register
B
D
OUT B
D
OUT A
Transitioning data
Undefined
Notes:
1. MRRs to DQ calibration registers MR32 and MR40 are described in the Data Calibration
Pattern Description table.
2. Only the NOP command is supported during tMRR.
3. Mode register data is valid only on DQ[7:0] on the first beat. Subsequent beats contain
valid but undefined data. DQ[MAX:8] contain valid but undefined data for the duration
of the MRR burst.
4. Minimum MRR to write latency is RL + RU(tDQSCKmax/tCK) + 4/2 + 1 - WL clock cycles.
5. Minimum MRR to MRW latency is RL + RU(tDQSCKmax/tCK) + 4/2 + 1 clock cycles.
READ bursts and WRITE bursts cannot be truncated by MRR. Following a READ com-
mand, the MRR command must not be issued before BL/2 clock cycles have completed.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
MODE REGISTER READ
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
76
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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