EDBA164B4PR-1DITF-R datasheet(62/152 Pages) MICRON

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Following an auto precharge operation, an ACTIVATE command can be issued to the

same bank if the following two conditions are satisfied simultaneously:

• The RAS precharge time (tRP) has been satisfied from the clock at which the auto pre-

charge begins.

• The RAS cycle time (tRC) from the previous bank activation has been satisfied.

Figure 39: READ Burst with Auto Precharge – RL = 3, BL = 4, RU(tRTP(MIN)/tCK) = 2

Bankm

col addr a

Col addr a

READ w/AP

NOP

CK_c

CK_t

CA[9:0]

CMD

DQS_c

DQS_t

RL = 3

Transitioning data

NOP

ACTIVATE

tRTP

BL/2

NOP

OUTA0

OUTA1

OUTA2

OUTA3

NOP

Bankm

row addr

Row addr

≥tRPpb

WRITE Burst with Auto Precharge

If AP (CA0f ) is HIGH when a WRITE command is issued, the WRITE with auto precharge

function is engaged. The device starts an auto precharge at the clock rising edge tWR

cycles after the completion of the burst WRITE.

Following a WRITE with auto precharge, an ACTIVATE command can be issued to the

same bank if the following two conditions are met:

• The RAS precharge time (tRP) has been satisfied from the clock at which the auto pre-

charge begins.

• The RAS cycle time (tRC) from the previous bank activation has been satisfied.

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM

PRECHARGE Command

09005aef85eb530a

216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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