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EDBA164B4PR-1DITF-R 数据表(PDF) 30 Page - Micron Technology |
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EDBA164B4PR-1DITF-R 数据表(HTML) 30 Page - Micron Technology |
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30 / 152 page ![]() Figure 12: Voltage Ramp and Initialization Sequence Ta Tb Tc Td Te Tf Tg RESET MRR ZQ_CAL Valid CK_c tINIT0 tINIT1 tINIT3 tINIT4 tZQINIT tINIT5 tISCKE PD tINIT2 CK_t Supplies CKE CA DQ Note: 1. High-Z on the CA bus indicates valid NOP. Table 10: Initialization Timing Parameters Parameter Value Unit Comment Min Max tINIT0 – 20 ms Maximum voltage ramp time tINIT1 100 – ns Minimum CKE LOW time after completion of voltage ramp tINIT2 5 – tCK Minimum stable clock before first CKE HIGH tINIT3 200 – μs Minimum idle time after first CKE assertion tINIT4 1 – μs Minimum idle time after RESET command tINIT5 – 10 μs Maximum duration of device auto initialization tZQINIT 1 – μs ZQ initial calibration (S4 devices only) tCKb 18 100 ns Clock cycle time during boot Note: 1. The tINIT0 maximum specification is not a tested limit and should be used as a general guideline. For voltage ramp times exceeding tINIT0 MAX, contact the factory. Initialization After RESET (Without Voltage Ramp) If the RESET command is issued before or after the power-up initialization sequence, the reinitialization procedure must begin at Td. Power-Off Sequence While powering off, CKE must be held LOW (≤0.2 × VDD2); all other inputs must be be- tween VILmin and VIHmax. The device outputs remain at High-Z while CKE is held LOW. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Power-Off Sequence 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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