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EDBA164B4PR-1DITF-R 数据表(PDF) 77 Page - Micron Technology |
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EDBA164B4PR-1DITF-R 数据表(HTML) 77 Page - Micron Technology |
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77 / 152 page ![]() Following a WRITE command, the MRR command must not be issued before WL + 1 + BL/2 + RU(tWTR/tCK) clock cycles have completed. If a READ or WRITE burst is trunca- ted with a BST command, the effective burst length of the truncated burst should be used for the BL value. Figure 50: READ to MRR Timing – RL = 3, tMRR = 2 Bank m col addr a Col addr a READ NOP2 T0 T1 T2 T3 T4 T5 T6 T7 T8 CK_c CK_t CA[9:0] CMD DQS_c DQS_t DQ[7:0] DQ[MAX:8] RL = 3 Transitioning data Undefined tMRR = 2 BL/21 D OUT B D OUT A0 D OUT A1 D OUT A2 D OUT A3 D OUT A0 D OUT A1 D OUT A2 D OUT A3 Valid Register B Register B MRR Notes: 1. The minimum number of clock cycles from the burst READ command to the MRR com- mand is BL/2. 2. Only the NOP command is supported during tMRR. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM MODE REGISTER READ 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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