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EDBA164B4PR-1DITF-R 数据表(PDF) 33 Page - Micron Technology

部件名 EDBA164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DITF-R 数据表(HTML) 33 Page - Micron Technology

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Table 13: MR0 Device Information (MA[7:0] = 00h)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
RFU
RZQI
RFU
DI
DAI
Table 14: MR0 Op-Code Bit Definitions
Notes 1–4 apply to all parameters and conditions
Register Information
Tag
Type
OP
Definition
Device auto initialization
status
DAI
Read-only
OP0
0b: DAI complete
1b: DAI in progress
Device information
DI
Read-only
OP1
0b:DDR2 Mobile RAM (S4 SDRAM)
Built-in self test for RZQ
information
RZQI
Read-only
OP[4:3]
01b: ZQ pin might be connected to VDD2 or left floating
10b: ZQ pin might be shorted to ground
11b: ZQ pin self test complete; no error condition de-
tected(ZQ-pin may not connect to VDD or float nor
short to GND)
Notes:
1. If RZQI is supported, it will be set upon completion of the MRW ZQ initialization calibra-
tion.
2. If ZQ is connected to VDD2 to set default calibration, OP[4:3] must be set to 01. If ZQ is
not connected to VDD2, either OP[4:3] = 01 or OP[4:3] = 10 could indicate a ZQ-pin as-
sembly error. It is recommended that the assembly error be corrected.
3. In the case of a possible assembly error (either OP[4:3] = 01 or OP[4:3] = 10, as defined
above), the device will default to factory trim settings for RON(output impedance) and
will ignore ZQ calibration commands. In either case, the system might not function as
intended.
4. If a ZQ self test returns a value of 11b, this indicates that the device has detected a resis-
tor connection to the ZQ pin. Note that this result cannot be used to validate the ZQ
resistor value, nor does it indicate that the ZQ resistor tolerance meets the specified lim-
its (240 ohms ±1%).
Table 15: MR1 Device Feature 1 (MA[7:0] = 01h)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
nWR (for AP)
WC
BT
BL
Table 16: MR1 Op-Code Bit Definitions
Feature
Type
OP
Definition
Notes
BL = burst length
Write-only
OP[2:0]
010b: BL4 (default)
1
011b: BL8
100b: BL16
All others: Reserved
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Mode Register Definition
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
33
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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