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EDBA164B4PR-1DITF-R 数据表(PDF) 58 Page - Micron Technology |
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EDBA164B4PR-1DITF-R 数据表(HTML) 58 Page - Micron Technology |
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58 / 152 page ![]() Figure 35: Write Data Mask – Second Data Bit Masked DQS_c CK_c DQ Don’t Care DM CMD WL = 2 tDQSSmax tDQSSmin D IN0 D IN2 D IN3 WRITE tWTR tWR DQ DM D IN0 D IN2 D IN3 Case 1: tDQSSmin Case 2: tDQSSmax D IN1 D IN1 CK_t DQS_t DQS_c DQS_t Note: 1. For the data mask function, WL = 2, BL = 4 is shown; the second data bit is masked. PRECHARGE Command The PRECHARGE command is used to precharge or close a bank that has been activa- ted. The PRECHARGE command is initiated with CS_n LOW, CA0 HIGH, CA1 HIGH, CA2 LOW, and CA3 HIGH at the rising edge of the clock. The PRECHARGE command can be used to precharge each bank independently or all banks simultaneously. For a 4- bank device, the AB flag and bank address bits BA0 and BA1 are used to determine which bank(s) to precharge. For an 8-bank device, the AB flag and the bank address bits BA0, BA1, and BA2 are used to determine which bank(s) to precharge. The precharged bank(s) will be available for subsequent row access tRPab after an all bank PRECHARGE command is issued, or tRPpb after a single-bank PRECHARGE command is issued. To ensure that an 8-bank device can meet the instantaneous current demand required to operate, the row precharge time (tRP) for an all bank PRECHARGE in an 8-bank de- vice (tRPab) will be longer than the row precharge time for a single-bank PRECHARGE (tRPpb). For a 4-bank device, tRPab is equal to tRPpb. ACTIVATE to PRECHARGE timing is shown in ACTIVATE Command. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM PRECHARGE Command 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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