EDBA164B4PR-1DITF-R datasheet(68/152 Pages) MICRON

68 / 152 page

every rolling refresh window during refresh pattern transitions. The supported transi-

tion from a burst pattern to a regular distributed pattern is shown in the Supported

Transition from Repetitive REFRESH Burst figure. If this transition occurs immediately

after the burst refresh phase, all rolling tREFW intervals will meet the minimum re-

quired number of REFRESH commands.

A nonsupported transition is shown below. In this example, the regular refresh pattern

starts after the completion of the pause phase of the burst/pause refresh pattern. For

several rolling tREFW intervals, the minimum number of REFRESH commands is not

satisfied.

Understanding this pattern transition is extremely important, even when only one pat-

tern is employed. In self refresh mode, a regular distributed refresh pattern must be as-

sumed. Micron recommends entering self refresh mode immediately following the

burst phase of a burst/pause refresh pattern; upon exiting self refresh, begin with the

burst phase (see the Recommended Self Refresh Entry and Exit figure).

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM

REFRESH Command

09005aef85eb530a

216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

EDBA164B4PR-1DITF-R 数据表(PDF) 68 Page - Micron Technology