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EDBA164B4PR-1DITF-R 数据表(PDF) 102 Page - Micron Technology

部件名 EDBA164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DITF-R 数据表(HTML) 102 Page - Micron Technology

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Absolute Maximum Ratings
Stresses greater than those listed below may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other
conditions outside those indicated in the operational sections of this document is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
Table 59: Absolute Maximum DC Ratings
Parameter
Symbol
Min
Max
Unit
Notes
VDD1 supply voltage relative to VSS
VDD1
–0.4
+2.3
V
1
VDD2 supply voltage relative to VSS
VDD2 (1.2V)
–0.4
+1.6
V
1
VDDQ supply voltage relative to VSSQ
VDDQ
–0.4
+1.6
V
1, 3
Voltage on any ball relative to VSS
VIN, VOUT
–0.4
+1.6
V
Storage temperature
TSTG
–55
+125
˚C
4
Notes:
1. See 1. Voltage Ramp under Power Up.
2. VREFCA 0.6 ≤ VDD2; however, VREFCA may be ≥ VDD2 provided that VREFCA ≤ 300mV.
3. VREFDQ 0.6 ≤ VDDQ; however, VREFDQ may be ≥ VDDQ provided that VREFDQ ≤ 300mV.
4. Storage temperature is the case surface temperature on the center/top side of the de-
vice. For measurement conditions, refer to the JESD51-2 standard.
Input/Output Capacitance
Table 60: Input/Output Capacitance
Note 1 applies to all parameters and conditions
Parameter
Symbol
MIN
MAX
Unit
Notes
Input capacitance, CK and CK#
CL1
1.0
3.0
pF
2
Input capacitance, all other LPDDR2 input only balls
CL2
1.0
3.0
pF
2
Input/output capacitance, DQ, DM, DQS, DQS#
CI/O
2.0
3.5
pF
2, 3
Input/output capacitance, ZQ
CZQ
2.0
3.0
pF
2, 3
Notes:
1. This parameter is not subject to production testing. It is verified by design and character-
ization. The capacitance is measured according to JEP147 (procedure for measuring in-
put capacitance using a vector network analyzer), with VDD1, VDD2, VDDQ, VSS, and VSSQ
applied; all other pins are left floating.
2. These parameters are measured on f = 100 MHz, VOUT = VDDQ2, TA = 25°C.
3. DOUT circuits are disabled.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Absolute Maximum Ratings
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
102
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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