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EDBA164B4PR-1DITF-R 数据表(PDF) 118 Page - Micron Technology

部件名 EDBA164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DITF-R 数据表(HTML) 118 Page - Micron Technology

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Figure 76: Single-Ended Output Slew Rate Definition
V
OH(AC)
V
REF
V
OL(AC)
Time
ΔTF
SE
ΔTR
SE
Table 79: Single-Ended Output Slew Rate
Notes 1–5 apply to all parameters conditions
Parameter
Symbol
Value
Unit
Min
Max
Single-ended output slew rate (output impedance = 40
Ω 
SRQSE
1.5
3.5
V/ns
Single-ended output slew rate (output impedance = 60
Ω 
SRQSE
1.0
2.5
V/ns
Output slew-rate-matching ratio (pull-up to pull-down)
0.7
1.4
Notes:
1. Definitions: SR = slew rate; Q = output (similar to DQ = data-in, data-out); SE = single-
ended signals.
2. Measured with output reference load.
3. The ratio of pull-up to pull-down slew rate is specified for the same temperature and
voltage over the entire temperature and voltage range. For a given output, the ratio
represents the maximum difference between pull-up and pull-down drivers due to proc-
ess variation.
4. The output slew rate for falling and rising edges is defined and measured between
VOL(AC) and VOH(AC).
5. Slew rates are measured under typical simultaneous switching output (SSO) conditions,
with one-half of DQ signals per data byte driving HIGH and one-half of DQ signals per
data byte driving LOW.
Differential Output Slew Rate
With the reference load for timing measurements, the output slew rate for falling and
rising edges is defined and measured between VOL,diff(AC) and VOH,diff(AC) for differential
signals.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Output Characteristics and Operating Conditions
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
118
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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