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ADE5166 数据表(PDF) 102 Page - Analog Devices

部件名 ADE5166
功能描述  Single-Phase Energy Measurement IC with 8052 MCU, RTC, and LCD Driver
PDF  148 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADE5166 数据表(HTML) 102 Page - Analog Devices

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ADE5166/ADE5169/ADE5566/ADE5569
Preliminary Technical Data
Rev. PrB | Page 102 of 148
ECON—Flash/EE Memory Control SFR
Programming flash memory is done through the flash memory
control flash control SFR (ECON, 0xB9). This SFR allows the
user to read, write, erase, or verify the 62 kB of flash memory.
As a method of security, a key must be written to the FLSHKY
register to initiate any user access to the flash memory. Upon
completion of the flash memory operation, the FLSHKY
register is reset such that it must be written prior to another
flash memory operation. Requiring the key to be set before an
access to the flash memory decreases the likelihood of user code
or data being overwritten by a program that has run amuck.
The program counter, PC, is held on the instruction where the
ECON register is written to until the flash memory controller is
done performing the requested operation. Then the PC incre-
ments to continue with the next instruction. Any interrupts
requests that occur while the flash controller is performing an
operation are not handled until the flash operation is complete.
All peripherals, such as timers and counters, will continue to
operate as configured throughout the flash memory access.
Table 95. Flash Control SFR (ECON, 0xB9)
Bit
Mnemonic
Default
Value
Description
7 to 0
ECON
0
1
Write byte. The value in EDATA is written to the Flash memory, at the page address given by
EADRH and EARDL. Note that the byte being addressed must be pre-erased.
2
Erase page. A 512-byte page of Flash memory address is erased. The page is selected by the
address in EADRH/L. Any address in the page can be written to EADRH/EADRL to select it for
erasure.
3
Erase all. All 62 kB of the available Flash memory are erased. Note that this command is used
during serial mode and parallel download mode but should not be executed by user code.
4
Read byte. The byte in the Flash memory, addressed by EADRH/L, is read into EDATA.
5
Reserved.
6
Reserved.
7
Reserved.
8
Protect code (see the Protecting the Flash Memory section).
Table 96. Flash Key SFR (FLSHKY, 0xBA)
Bit
Mnemonic
Default
Description
7 to 0
FLSHKY
0xFF
The content of this SFR is compared to the Flash key, 0x3B. If the two values match the next ECON
operation is allowed (see the Protecting the Flash Memory section).
Table 97. Flash Protection Key SFR (PROTKY, 0xBB)
Bit
Mnemonic
Default
Description
7 to 0
PROTKY
0xFF
The content of this SFR is compared to the flash memory location at Address 0xF7EA. If the two
values match, the update of the write/erase and read protection set up is allowed (see the Protecting
the Flash Memory section).
If the protection key in the flash is 0xFF, the PROTKY SFR value is not used for comparison.
The PROTKY SFR is also used to write the protection key in the flash. This is done by writing the
desired value in PROTKY and writing 0x08 in the ECON SFR. This operation can only be done once.
Table 98. Flash Data SFR (EDATA, 0xBC)
Bit
Mnemonic
Default
Description
7 to 0
EDATA
0
Flash pointer data.
Table 99. Flash Low Byte Address SFR (EADRL, 0xC6)
Bit
Mnemonic
Default
Description
7 to 0
EADRL
0
Flash pointer low byte address.
Table 100. Flash High Byte Address SFR (EADRH, 0xC7)
Bit
Mnemonic
Default
Description
7 to 0
EADRH
0
Flash pointer high byte address.



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