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Preliminary Technical Data

ADE5166/ADE5169/ADE5566/ADE5569

Rev. PrB | Page 99 of 148

FLASH MEMORY

FLASH MEMORY OVERVIEW

Flash memory is a type of nonvolatile memory that is in-circuit

programmable. The default, erased state of a byte of flash

memory is 0xFF. When a byte of flash memory is programmed,

the required bits change from one to zero. The flash memory

must be erased to turn the zeros back to ones. A byte of flash

memory cannot however be erased individually. The entire

segment, or page, of flash memory that contains the byte must

be erased.

The ADE5166/ADE5169/ADE5566/ADE5569 provide 62 bytes

of flash program/information memory. This memory is segmented

into 124 pages each containing 512 bytes. To reprogram one

byte of flash memory, the 511 bytes in that page must be erased.

The flash memory can be erased by page or all at once in a mass

erase. There is a command to verify that a flash write operation

has completed successfully. The ADE5166/ADE5169/ADE5566/

ADE5569 flash memory controller also offers configurable flash

memory protection.

The 62 bytes of flash memory are provided on-chip to facilitate

code execution without any external discrete ROM device

requirements. The program memory can be programmed in-

circuit, using the serial download mode provided or using

conventional third party memory programmers.

Flash/EE Memory Reliability

The flash memory arrays on the ADE5166/ADE5169/ADE5566/

ADE5569 are fully qualified for two key Flash/EE memory

characteristics: Flash/EE memory cycling endurance and

Flash/EE memory data retention.

Endurance quantifies the ability of the Flash/EE memory to be

cycled through many program, read, and erase cycles. In real

terms, a single endurance cycle is composed of four independent,

sequential events:

Initial page erase sequence

Read/verify sequence

Byte program sequence

Second read/verify sequence

In reliability qualification, every byte in both the program and

data Flash/EE memory is cycled from 0x00 to 0xFF until a first

fail is recorded, signifying the endurance limit of the on-chip

Flash/EE memory.

As indicated in Table 4, the ADE5166/ADE5169/ADE5566/

ADE5569 flash memory endurance qualification has been

carried out in accordance with JEDEC Standard Method A117

over the industrial temperature range of –40°C, +25°C, and

+85°C. The results allow the specification of a minimum endur-

ance figure over supply and temperature of 100,000 cycles, with a

minimum endurance figure of 20,000 cycles of operation at 25°C.

Retention is the ability of the Flash memory to retain its

programmed data over time. Again, the parts have been qualified

in accordance with the formal JEDEC Retention Lifetime

Specification (A117) at a specific junction temperature (TJ =

55°C). As part of this qualification procedure, the flash memory

is cycled to its specified endurance limit described previously,

before data retention is characterized. This means that the flash

memory is guaranteed to retain its data for its full specified

retention lifetime every time the flash memory is reprogrammed.

It should also be noted that retention lifetime, based on an activa-

tion energy of 0.6 eV, derates with TJ, as shown in Figure 70.

TJ JUNCTION TEMPERATURE (°C)

250

200

150

100

110

300

100

ANALOG DEVICES

SPECIFICATION

100 YEARS MIN.

AT TJ = 55°C

Figure 70. Flash/EE Memory Data Retention

FLASH MEMORY ORGANIZATION

The ADE5166/ADE5169/ADE5566/ADE5569 contain a 64 kB

array of Flash/EE program memory. The upper 2 kB contain

permanently embedded firmware, allowing in-circuit serial

download, serial debug and nonintrusive single-pin emulation.

The 2 kB of embedded firmware also contains essential

coefficients that provide calibration to peripherals such as the

ADCs and reference. The embedded firmware contained in the

upper 2 kB of Flash/EE memory is not accessible by the user.

EMBEDDED DOWNLOAD/DEBUG KERNEL

PERMANENTLY EMBEDDED FIRMWARE ALLOWS

CODE TO BE DOWNLOADED TO ANY OF THE

62 kB OF ON-CHIP PROGRAM MEMORY.

THE KERNEL PROGRAM APPEARS AS NOP

INSTRUCTIONS TO USER CODE.

62 kB OF FLASH/EE PROGRAM MEMORY

ARE AVAILABLE TO THE USER. ALL OF THIS

SPACE CAN BE PROGRAMMED FROM THE

PERMANENTLY EMBEDDED DOWNLOAD/DEBUG

KERNEL OR IN PARALLEL PROGRAMMING MODE.

USER PROGRAM MEMORY

0×FFFF

2kB

0×F800

0×F7FF

62kB

0×0000

Figure 71. Flash Memory Organization

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