RM0352 datasheet(34/138 Pages) STMICROELECTRONICS

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Embedded Flash memory

RM0352

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DocID024647 Rev 1

6.3.4

Command register

Status bits:

•

Writing to the COMMAND register will start the action that will be performed on the

Flash.

•

The CMDSDTART flag will go high and stays high until it is cleared. The busy flag will

go low again when the command has finished.

•

When the command has finished the CMDDONE flag goes high.

•

When a MASS READ command was given and when CMDDONE is high, the

READOK flag can be checked or the LFSRVAL register can be read (contains the

signature of the mass read).

ERASE

For page erase we can erase one of 32 pages in program memory.

The APB actions that need to be performed are:

•

Write ADDRESS register value of the page you want to erase:

–

XADR[7:3] = Page address.

•

Write ERASE command value to the COMMAND register.

MASS ERASE

MASS ERASE can be performed on the whole program memory space.

The APB action that needs to be performed is:

•

Write MASS ERASE command value to the COMMAND register.

WRITE

One word can be programmed per WRITE command.

Table 20. Flash command register

Command

Flash section

Description

Value

Flash lock

ERASE

(1)

Please refer to

Note: on page 31 for system clocking constraints associated to this command.

Program memory

Erase page defined by register ADDRESS.

0x11

Blocked

MASSERASE

(1)

Program memory

Mass erase (Flash is completely erased).

0x22

Allowed

WRITE

(1)

Program memory

Program one location (defined by registers DATA

and ADDRESS).

0x33

Blocked

MASSWRITE

(1)

Program memory

Program all locations. With the same value (DATA

0x44

Allowed

MASSREAD

Program memory

Read all locations and compare with DATA register

value or produce LFSR signature.

0x55

Blocked

SLEEP

Put Flash in sleep mode.

0xAA

Allowed

WAKEUP

Get Flash out of sleep mode.

0xBB

Allowed

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