RM0312 datasheet(25/275 Pages) STMICROELECTRONICS

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RM0312

Flash program memory and data EEPROM

4.1

Introduction

The embedded Flash program memory and data EEPROM memories are controlled by a

common set of registers. Using these registers, the application can program or erase

memory contents and set write protection. The application can also program the device

option bytes.

4.2

Glossary

•

Block

A block is a set of bytes that can be programmed or erased in one single programming

operation. Operations that are performed at block level are faster than standard

programming and erasing. Refer to Table 5 for the details on block size.

•

Page

A page is a set of blocks.

Dedicated option bytes can be used to configure, by increments of one page, the size

of the user boot code, data EEPROM and proprietary code.

4.3

Main Flash memory features

•

The EEPROM for STM8TL5xxx touch sensing devices is divided into two memory

arrays (see Section 4.4: Memory organization for details on memory mapping):

–

Up to 16 Kbytes of embedded Flash program including up to 2 Kbytes of data

EEPROM. Data EEPROM and Flash program areas can be write protected

independently by using the memory access security mechanism (MASS).

–

64 option bytes (one block) of which 5 bytes are already used for the device.

•

Programming modes

–

Byte programming and automatic fast byte programming (without erase operation)

–

Word programming

–

Block programming and fast block programming mode (without erase operation)

–

Interrupt generation on end of program/erase operation and on illegal program

operation.

•

In-application programming (IAP) and in-circuit programming (ICP) capabilities

•

Protection features

–

Memory readout protection (ROP)

–

Program memory write protection with memory access security system (MASS

keys)

–

Data memory write protection with memory access security system (MASS keys)

–

Programmable write protected user boot code area (UBC).

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