RM0312 datasheet(33/275 Pages) STMICROELECTRONICS

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RM0312

Flash program memory and data EEPROM

The EOP and WR_PG_DIS bits of the FLASH_IAPSR register can be checked to determine

if the fast block programming operation has been correctly completed.

Caution:

The data programmed in the block are not guaranteed when the block is not blank before

the fast block program operation.

Block erasing

A block erase allows a whole block to be erased.

To erase a whole block, the ERASE bit in the FLASH_CR2 register must be previously set to

enable block erasing (see Section 4.8.2: Flash control register 2 (FLASH_CR2)). The block

is then erased by writing ‘0x00 00 00 00’ to any word inside the block. The word start

address must end with ‘0’, ‘4’, ‘8’, or ‘C’.

The EOP and the WR_PG_DIS control flags of the FLASH_IAPSR together with the Flash

interrupt can be used to determine if the operation has been correctly completed.

4.7

ICP and IAP

The in-circuit programming (ICP) method is used to update the entire content of the memory,

using the SWIM interface to load the user application into the microcontroller. ICP offers

quick and efficient design iterations and eliminates unnecessary package handling or

socketing of devices. The SWIM interface (single wire interface module) uses the SWIM pin

to connect to the programming tool.

In contrast to the ICP method, in-application programming (IAP) can use any communication

interface supported by the microcontroller (I/Os, I2C, SPI, USART...) to download the data to

be programmed in the memory. IAP allows the Flash program memory content to be

reprogrammed during application execution. Nevertheless, part of the application must have

been previously programmed in the Flash program memory using ICP.

Refer to the STM8TL5xxx Flash programming manual (PM0212) and STM8 SWIM protocol

and debug manual (UM0470) for more information on programming procedures.

Table 5. Block size

STM8 microcontroller family

Block size

STM8TL5xxx touch sensing

64 bytes

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