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数据搜索系统，热门电子元器件搜索 |
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RM0312 数据表(PDF) 35 Page - STMicroelectronics |
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RM0312 数据表(HTML) 35 Page - STMicroelectronics |
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35 / 275 page  DocID022352 Rev 3 35/275 RM0312 Flash program memory and data EEPROM 39 5. The data memory is write protected (locked) until the correct MASS key is written in the FLASH_DUKR. It is possible to lock the memory again by resetting the DUL bit in the FLASH_IAPSR register. If incorrect keys are provided, another key program sequence can be performed without resetting the device. 6. The PCODE area can be read and executed only in privileged mode through TRAP vectors. The PCODE cannot be directly accessed through the SWIM. 7. To program the UBC area the application must first clear the UBC option byte. 8. The option bytes are write protected (locked) until the correct MASS key is written in the FLASH_DUKR (with OPT set to ‘1’). It is possible to lock the memory again by resetting the DUL bit in the FLASH_IAPSR register. If incorrect keys are provided, another key program sequence can be performed without resetting the device. 9. When ROP is removed, the whole memory is erased, including option bytes. |
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