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EDBA164B4PR-1DITF-R 数据表(PDF) 139 Page - Micron Technology |
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EDBA164B4PR-1DITF-R 数据表(HTML) 139 Page - Micron Technology |
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139 / 152 page ![]() Table 94: Derating Values for AC/DC-Based tIS/tIH (AC220) ΔtIS, ΔtIH derating in ps AC220 Threshold -> VIH(ac)=VREF(dc)+220mV, VIL(ac)=VREF(dc)-220mV DC100 Threshold -> VIH(dc)=VREF(dc)+130mV, VIL(dc)=VREF(dc)-130mV CK_t, CK_c Differential Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns Δ ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH CA, CS_n slew rate V/ns 2.0 110 65 110 65 110 65 1.5 74 43 73 43 73 43 89 59 1.0 0 0 0 0 00 16 16 32 32 0.9 -3 -5 -3 -5 13 11 29 27 45 43 0.8 -8 -13 8 3 24 19 40 35 56 55 0.7 2 -6 1810342650466678 0.6 10 -3 26 13 42 33 58 65 0.5 4 -4 20163648 0.4 -7 2 17 34 Note: 1. Shaded cells are not supported. Table 95: Derating Values for AC/DC-Based tIS/tIH (AC300) ΔtIS, ΔtIH derating in ps AC300 Threshold -> VIH(ac)=VREF(dc)+300mV, VIL(ac)=VREF(dc)-300mV DC200 Threshold -> VIH(dc)=VREF(dc)+200mV, VIL(dc)=VREF(dc)-200mV CK_t, CK_c Differential Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH CA, CS_n slew rate V/ns 2.0 150 100 150 100 150 100 1.5 100 67 100 67 100 67 116 83 1.0 0 0 0 0 00 16 16 32 32 0.9 -4 -8 -4 -8 12 8 28 24 44 40 0.8 -12 -20 4 -4 201236285248 0.7 -3 -18 13 -2 29 14 45 34 61 66 0.6 2 -21 18 -5 34 15 50 47 0.5 -12 -32 4 -12 20 20 0.4 -35 -40 -11 -8 Note: 1. Shaded cells are not supported. Table 96: Required Time for Valid Transition – tVAC > VIH(AC) and < VIL(AC) Slew Rate (V/ns) tVAC at 300mV (ps) tVAC at 220mV (ps) Min Max Min Max >2.0 75 – 175 – 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM CA and CS_n Setup, Hold, and Derating 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 139 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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