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数据搜索系统，热门电子元器件搜索 |
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28HS01GTAM03 数据表(PDF) 3 Page - Infineon Technologies AG |
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28HS01GTAM03 数据表(HTML) 3 Page - Infineon Technologies AG |
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3 / 138 page  Datasheet 3 of 138 002-18216 Rev. *W 2022-01-18 256Mb/512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V Data integrity Data integrity Program / Erase (PE) endurance - High endurance (256KB sectors) Sectors in partition Minimum PE cycles Minimum retention time Unit 512 (Default for 1Gb devices) 2,560,000 2Years 508 2,540,000 504 2,520,000 ... ... 256 (Default for 512Mb devices) 1,280,000 252 1,260,000 128 (Default for 256Mb devices) 640,000 ... 28 140,000 24 120,000 20 100,000 Note Minimum cycles is for entire High Endurance Partition. Program / Erase endurance - Long retention partition (256KB sectors) Minimum PE cycles Minimum retention time Unit 500 25 Years Note Minimum cycles is for each sector. Program / Erase endurance 4KB sector and nonvolatile register array Flash memory type Minimum cycles Unit Minimum retention time Unit Program/Erase cycles per 4KB sector 500 PE cycles 25 Years 300,000 Note It is required to restrict the power loss events to 300 times per sector during program or erase operation to achieve the mentioned endurance cycles. 2 Program/Erase cycles per Persistent Protection Bits (PPB) array or nonvolatile register array Note Each write transaction to a nonvolatile register causes a PE cycle on the entire nonvolatile register array. 500 25 |
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