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28HS01GTAM03 数据表(PDF) 92 Page - Infineon Technologies AG |
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28HS01GTAM03 数据表(HTML) 92 Page - Infineon Technologies AG |
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92 / 138 page  Datasheet 92 of 138 002-18216 Rev. *W 2022-01-18 256Mb/512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V Registers 5.23 INT# pin status register (INSV) - Octal Only The INT# Pin Status Register (INSV) indicates which internal event(s) has occurred since the last time the ISR was cleared. 5.24 Infineon® Endurance Flex architecture selection register (EFXx) The Infineon® Endurance Flex architecture Selection registers (EFXx) define the long retention / high endurance regions based on a four pointer based architecture. Table 69 Interrupt status register Bit number Name Function Read/Write N = Nonvolatile V = Volatile Factory default (binary) Description INSV[7:5] RESRVD Reserved for Future Use V -> R/W 111 These bits are Reserved for future use. This bit must always be written/loaded to its default state. INSV[4] REYBSY Ready/Busy Transition V -> R/W 1 Description: The REYBSY bit indicates whether the device's ready/busy status has caused a transition on INT#. Selection Options: 0 = A Busy to Ready transition has occurred 1 = A Busy to Ready transition has not occurred Dependency: N/A INSV[3:2] RESRVD Reserved for Future Use V -> R/W 11 These bits are Reserved for future use. This bit must always be written/loaded to its default state. INSV[1] ECC2BT ECC 2-bit Error Detection V -> R/W 1 Description: The ECC2BT bit indicates whether a 2-bit ECC detection error has caused a transition on INT#. Selection Options: 0 = 2-bit error detection has occurred 1 = 2-bit error detection has not occurred Dependency: N/A INSV[0] ECC1BT ECC 1-bit Error Detection and Correction V -> R/W 1 Description: The ECC1BT bit indicates whether a 1-bit ECC correction error has caused a transition on INT#. Selection Options: 0 = 1-bit error correction has occurred 1 = 1-bit error correction has not occurred Dependency: N/A Table 70 Infineon® Endurance Flex architecture selection register (pointer 4) Bit number Name Function Read/Write N = Nonvolatile V = Volatile Factory default (binary) Description EFX4O[10:2] EPTAD4[8:0] Endurance Flex Pointer 4 Address Selection N -> R/1 111111111 Description: The EPTAD4[8:0] bits define the 9-bit address of the beginning sector from where the long retention / high endurance region is defined. Selection Options: Pointer Address Dependency: N/A EFX4O[1] ERGNT4 Endurance Flex Pointer 4 based Region Type Selection N -> R/1 1 Description: The ERGNT4 bit defines whether the region is long retention or high endurance. Selection Options: 0 = Long Retention Sectors 1 = High Endurance Sectors Dependency: N/A EFX4O[0] EPTEB4 Endurance Flex Pointer 4 Enable# Selection N -> R/1 1 Description: The EPTEN4 bit define whether the wear leveling pointer is enabled/disabled. Selection Options: 0 = Pointer Address Enabled 1 = Pointer Address Disabled Dependency: N/A |
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