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28HS01GTAM03 数据表(PDF) 32 Page - Infineon Technologies AG |
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28HS01GTAM03 数据表(HTML) 32 Page - Infineon Technologies AG |
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32 / 138 page ![]() Datasheet 32 of 138 002-18216 Rev. *W 2022-01-18 256Mb/512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V Features 4.2 Infineon® Endurance Flex architecture (wear leveling) Infineon® Endurance Flex architecture allows partitioning of the main memory array into regions which can be configured as either high endurance or long retention. Endurance Flex implements wear leveling in high endurance regions where program/erase cycles are spread evenly across all the sectors which are part of the wear leveling pool. This greatly improves the reliability of the device by avoiding premature wear-out of an individual sector. Architecturally, Endurance Flex's wear leveling algorithm is based on a mapping of logical sectors to physical sectors. During the lifetime of the part, this mapping is changed to maintain a uniform distribution of program/erase cycles over all physical sectors. The logical to physical mapping information is stored in a dedicated flash array which is updated when sectors are swapped. Sector swaps occur when an erase transaction is given. Endurance Flex’s high endurance region requires a minimum set of 20 sectors. To provide flexibility between configuring long retention, high endurance, or both regions, a four pointer architecture is provided. The factory default setting designates all sectors as high endurance as part of the wear leveling pool with all pointers disabled. The four pointers can be used to form a maximum of five regions which can each be configured as long retention or high endurance. Figure 37 provides an overview of the Infineon® Endurance Flex architecture. It shows the five possible regions based on different sector architecture. Note 4KB sectors are not part of the Infineon® Endurance Flex architecture. |
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