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28HS01GTAM03 数据表(PDF) 2 Page - Infineon Technologies AG

部件名 28HS01GTAM03
功能描述  S256Mb/512Mb/1Gb SEMPER??Flash Octal interface, 1.8V/3.0V
PDF  138 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

28HS01GTAM03 数据表(HTML) 2 Page - Infineon Technologies AG

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Datasheet
2 of 138
002-18216 Rev. *W
2022-01-18
256Mb/512Mb/1Gb SEMPER™ Flash
Octal interface, 1.8V/3.0V
Performance summary
-1Gb devices
• Min. 2,560,000 program-erase cycles for the main array
-All devices
• Min. 300,000 program-erase cycles for the 4KB sectors
• Minimum 25 years data retention
• Supply voltage
- 1.7V to 2.0V (HS-T)
- 2.7V to 3.6V (HL-T)
• Grade / temperature range
- Industrial (40°C to +85°C)
- Industrial plus (40°C to +105°C)
- Automotive AEC-Q100 grade 3 (40°C to +85°C)
- Automotive AEC-Q100 grade 2 (40°C to +105°C)
- Automotive AEC-Q100 grade 1 (40°C to +125°C)
•Packages
- 256Mb and 512Mb: 24-ball BGA 6  8 mm
- 1Gb: 24-ball BGA 8  8 mm
Performance summary
Maximum read rates
Transaction
Initial access latency (Cycles)
Clock rate (MHz)
MBps
SPI Read
0
50
6.25
SPI Read Fast
10
166
20.75
Octal Read SDR (HS-T)
16
200
200
Octal Read SDR (HL-T)
14
166
166
Octal Read DDR (HS-T)
23
200
400
Octal Read DDR (HL-T)
20
166
332
Typical Program and Erase rates
Operation
KBps
256B Page Programming (4KB Sector / 256KB Sector)
595 / 533
512B Page Programming (4KB Sector / 256KB Sector)
753 / 898
256KB Sector Erase
331
4KB Sector Erase
95
Typical current consumption
Operation
HL-T current (mA)
HS-T current (mA)
SDR Read 50MHz
10
10
SDR Read (Octal)
75 (166MHz)
156 (200MHz)
DDR Read (Octal)
75 (166MHz)
156 (200MHz)
Program
50
50
Erase
50
50
Standby
0.014
0.011
Deep Power Down
0.0022
0.0013



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